Aixtron
G 10 SiC EPI Reactor
The Aixtron G 10 SiC EPI Reactor is an epitaxial silicon deposition system. The Aixtron G 10 SiC EPI Reactor is for 6-inch and 8-inch wafers.[1][2]
What it is
How it works
General reference — not yet source-verifiedAn epitaxial deposition reactor grows a crystalline film on a prepared wafer surface by exposing the wafer to process gases under controlled conditions.
A deposition reactor of this class typically uses a heated process chamber, gas delivery hardware, pumping, and exhaust handling to control film formation on the wafer surface.
Where it fits in the process flow
General reference — not yet source-verifiedEpitaxial deposition follows wafer preparation and precedes later device fabrication steps that build patterned structures on the epitaxial layer.
Applications
What do the numbers mean?
Vacuum & pumping1
- Aixtron G10-SiC Iodine Dry Pump[3]
Wafer handling1
Gas & chemistry2
Configuration & options6
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
Not publicly documented
The following facts about the G 10 SiC EPI Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 10 SiC EPI Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the G 10 SiC EPI Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the G 10 SiC EPI Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the G 10 SiC EPI Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the G 10 SiC EPI Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]waferpedia.com — waferpedia.comwaferpedia.com
- [2]Aixtron G 10 SiC EPI Reactor family | Waferpedia — waferpedia.comwaferpedia.com
- [3]Inventory photo
Last updated Oct 13, 2026.
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