Aixtron
The Aixtron G 4 MOCVD is a metal organic chemical vapor deposition system. The Aixtron G 4 MOCVD supports 4-inch wafers. The Aixtron G 4 MOCVD is configured for EPI processing.[1][2][3]

A metal organic chemical vapor deposition system is a deposition tool used to grow thin films on wafers from reactive precursor gases. MOCVD tools are commonly used where crystalline or compound semiconductor layers must be formed with controlled composition and thickness.
MOCVD systems generally deliver vapor phase precursors into a heated reactor, where the gases decompose or react at the wafer surface to form a deposited layer. MOCVD reactors generally combine gas delivery, pressure control, pumping, and temperature control so that film growth occurs under controlled chemical conditions.
Deposition tools such as MOCVD systems are used in process flows after a substrate has been prepared and before later patterning, etch, implant, metallization, or passivation steps, depending on the device design. Epitaxial deposition tools are used when a process requires a grown layer with specific material properties before downstream device fabrication continues.
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The following facts about the G 4 MOCVD are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 4 MOCVD are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the G 4 MOCVD are on record.
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The control-system platform and OS era of the G 4 MOCVD are not on record.
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No publicly documented failure modes or field errata for the G 4 MOCVD are on record.
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The process node or technology generation of the G 4 MOCVD is not on record.
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Last updated Oct 17, 2026.
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