Aixtron

G 5 HT IC 2 MOCVD Reactor

Deposition Aixtron G 5 HT IC 2 MOCVD Reactor family

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G 5 HT IC 2 MOCVD Reactor — Inventory photo — Fig. 01G 5 HT IC 2 MOCVD ReactorInventory photo^[1]

Vacuum

Standard Exhaust System^[1]

Gas delivery

Individual GFR Control for Each Puck^[1]

What is it?

The Aixtron G 5 HT IC 2 is a MOCVD reactor configured for InGaN MOCVD epitaxy and 6 x 6-inch wafers.

What do the numbers mean?

Power & electrical1

Heating System: RF Coil with Trumpf Huttinger RF Generator TruHeat 7120^[1]

Vacuum & pumping3

Standard Exhaust System^[1]
Process Pump: Ebara ESA 80 W^[1]
DOR & Glove BoxPumps: Anesta Iwata Scroll Pump (2)^[1]

Wafer handling1

Wafer: 6 x 6"^[1]

Gas & chemistry1

Gas Foil Rotation (GFR): Individual GFR Control for Each Puck^[1]

Control & software3

Software Version: AIXACT 6.0.0.27^[1]
PLC: 6.0.3830^[1]
Glove Box: MBraun Nitrogen Glovebox with Controller^[1]

Configuration & options11

SLC^[1]
Process: InGaN MOCVD Epitaxy^[1]
Metal Organic Sources: TMln x 3, 100 ppm SiH4 in Ar x 20 x 2^[1]
Concentration Monitors (2): Epison4 x 3 for TMln, Epison4 x 2 for TEGa^[1]; Chiller Baths (6 available for MO sources)^[1]
Purifiers: Entegris Getters for H2 & N2, Nanochem for NH3^[1]; Filters^[1]
Abatement: Unisem UN 2000 A-WHG (shared across 2 reactors)^[1]
Reactor Chiller: Tek-Temp Recirculating Closed Loop Chiller^[1]; Ceiling Temperature Controle^[1]; In-Situ Pyrometry (available)^[1]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Heating SystemRF Coil with Trumpf Huttinger RF Generator TruHeat 7120^[1]
ConfigurationStandard Exhaust System^[1]
Process PumpEbara ESA 80 W^[1]
DOR & Glove BoxPumpsAnesta Iwata Scroll Pump (2)^[1]
Gas Foil Rotation (GFR)Individual GFR Control for Each Puck^[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the G 5 HT IC 2 MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the G 5 HT IC 2 MOCVD Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the G 5 HT IC 2 MOCVD Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report