Aixtron

G 5 MOCVD Reactor

Deposition Aixtron G 5 MOCVD Reactor family

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G 5 MOCVD Reactor — Inventory photo — Fig. 01G 5 MOCVD ReactorInventory photo^[1]

What it is

The Aixtron G 5 is a metal organic chemical vapor deposition (MOCVD) reactor manufactured by Aixtron.^[1]^[2]

How it works

The Aixtron G 5 is a MOCVD reactor that uses a planetary reactor architecture.^[2]^[3]

The G 5 employs a warm-ceiling design to minimize heat flux through the wafers and reduce wafer curvature due to temperature gradients.^[2]

Where it fits in the process flow

General reference — not yet source-verified

In a typical compound semiconductor process flow, the MOCVD reactor follows substrate preparation and precedes subsequent patterning, etching, and metallization steps.

Applications

The Aixtron G 5 is used for the deposition of gallium nitride (GaN) and related III-Nitride compound semiconductor layers.^[2]

The G 5 is also suitable for epitaxial growth for power electronics devices.^[3]

What do the numbers mean?

Power & electrical4

Voltage: 208V/120V AC^[1]
Phase: 3 Phase^[1]
Frequency: 60 Hz^[1]
Power Supply: 208V/120V AC, 3-phase, 60 Hz^[1]

Wafer handling2

Wafer Size: 4 inch^[1]
Substrate Material: SiC (Silicon Carbide)^[1]

Gas & chemistry1

Process Type: Metal Organic Chemical Vapor Deposition (MOCVD)^[1]

Configuration & options2

SiC^[1]
Vintage Year: 2014^[1]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Voltage208V/120V AC^[1]
Phase3 Phase^[1]
Frequency60 Hz^[1]
Process TypeMetal Organic Chemical Vapor Deposition (MOCVD)^[1]
Power Supply208V/120V AC, 3-phase, 60 Hz^[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the G 5 MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 5 MOCVD Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the G 5 MOCVD Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the G 5 MOCVD Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the G 5 MOCVD Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the G 5 MOCVD Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (3)Every fact above is drawn from these public sources

[1]Inventory photo
[2]AIX G5+ C: Deposition System for Compound Semiconductors :: AIXTRON — aixtron.comaixtron.com
[3]AIX G5 WW C: Deposition System for Compound Semiconductors :: AIXTRON — aixtron.comaixtron.com