Hitachi
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The Hitachi M 9010 XST is an etcher for polysilicon processing. The Hitachi M 9010 XST handles 12-inch wafers.[1]
Etchers in this class remove material from a wafer surface using plasma or reactive gases to transfer a pattern defined by a previous lithography step.
Polysilicon etchers typically employ a radio-frequency (RF) plasma to generate reactive species that chemically attack and remove silicon from exposed areas while maintaining selectivity to underlying layers.
A polysilicon etcher is used after lithographic patterning of the gate layer in CMOS transistor fabrication.
The etching step removes polysilicon from areas not protected by photoresist, defining the transistor gate electrodes.
The primary application of a polysilicon etcher is gate electrode definition in logic and memory devices.
Polysilicon etching is also used in the formation of poly resistors and poly-poly capacitor structures.
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The following facts about the M 9010 XST are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the M 9010 XST are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the M 9010 XST are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the M 9010 XST are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the M 9010 XST are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the M 9010 XST is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Aug 20, 2026.