Hitachi
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The Hitachi S 7800 is a Critical Dimension Scanning Electron Microscope (CD-SEM) used for measuring critical dimensions on 8-inch wafers. The S 7800 achieves a standard resolution of 5 nm at 1 kV and a high-resolution mode of 1 nm in Single Spot X/Y Mode. The S 7800 includes stage travel of 0–200 mm in X and Y, and a throughput of 5 wafers per hour.[1]
The Hitachi S 7800 DR-SEM is a critical dimension scanning electron microscope for metrology and inspection. The Hitachi S 7800 measures critical dimensions on 8-inch wafers. The Hitachi S 7800 has a standard resolution of 5 nm at 1 kV. The Hitachi S 7800 has a high-resolution mode of 1 nm in Single Spot X/Y Mode. The Hitachi S 7800 has a throughput of 5 wafers per hour.[2][1]
The Hitachi S 7800 includes stage travel of 0–200 mm in X and 0–200 mm in Y. The Hitachi S 7800 includes stage travel of 4–12 mm in Z. The Hitachi S 7800 includes rotation of 0–360° and tilt of 0–60°. The Hitachi S 7800 has measurement precision of static 3 sigma ±0.010 µm. The Hitachi S 7800 has positioning accuracy in X/Y of ±15 µm. The Hitachi S 7800 has rotation precision of ±60 µm. The Hitachi S 7800 has pre-alignment accuracy in X/Y of ±15 µm. The Hitachi S 7800 includes AutoLive Software, Automatic Beam Current Control, Automatic Sample Control, Automatic Defect Review, and Automatic Navigation. The Hitachi S 7800 includes a chiller and a transformer. The Hitachi S 7800 does not include vacuum pumps in the vacuum system.[2][1]
Critical dimension scanning electron microscopes sit in the measurement and inspection flow around lithography and etch. Critical dimension scanning electron microscopes are commonly used after pattern transfer steps to verify whether printed or etched features match intended dimensions. Critical dimension scanning electron microscopes support process monitoring, excursion analysis, and feedback to patterning and profile-shaping steps.
Critical dimension scanning electron microscopes are used for dimensional measurement of patterned semiconductor features on production wafers. Critical dimension scanning electron microscopes are applied to patterned layers where feature width, spacing, hole size, edge placement, and profile-sensitive image interpretation matter to process control. Critical dimension scanning electron microscopes are also used for review of pattern defects and for navigation to specific wafer locations during engineering analysis.
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The Hitachi S 7800 has a standard resolution of 5 nm at 1 kV.[2][1]
The Hitachi S 7800 has a high-resolution mode of 1 nm in Single Spot X/Y Mode.[2][1]
The following facts about the S 7800 DR-SEM are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the S 7800 DR-SEM are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the S 7800 DR-SEM are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the S 7800 DR-SEM are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the S 7800 DR-SEM is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the S 7800 DR-SEM are on record.
Answerable by: an OEM parts catalog or a service engineer
Last updated Oct 17, 2026.
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