Gasonics Triple Speed NF

The Lam Research Gasonics Triple Speed NF is a chemical vapor deposition (CVD) system. The system is configured with three high-density plasma (HDP) chambers. The system includes a Brooks robot and uses an SLM type gas delivery system with three ports. The loadlock incorporates helium reduction.^[1]

High-density plasma CVD operates by generating a dense plasma using an inductively coupled source. The plasma dissociates precursor gases into reactive species that deposit a thin film on the wafer surface. The high ion density enables low-temperature deposition and good film quality.

The system uses multiple chambers to process several wafers simultaneously or in sequence, improving throughput. The robot transfers wafers between chambers and the loadlock, which maintains vacuum integrity.

HDP CVD is particularly suited for gap-fill applications where high aspect ratio features require void-free deposition. The process is commonly followed by chemical-mechanical planarization (CMP) to achieve a flat surface.

The Triple Speed NF is designed for deposition of dielectric films such as silicon dioxide, silicon nitride, and related materials. HDP CVD enables high-quality gap-fill for shallow trench isolation and intermetal dielectrics.

The system can also be used for deposition of doped films, such as phosphosilicate glass or borophosphosilicate glass, which are used as insulating layers in integrated circuits.