Plasma-Therm
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Reactive ion etchers are dry etch systems that remove material from a substrate by sustaining a low-pressure plasma in a process chamber. Reactive ion etchers are used when a process flow needs patterned material removal after lithography and before later deposition, cleaning, or device-completion steps.
Reactive ion etchers generally balance chemical reaction from plasma species with directional ion bombardment at the wafer surface. Reactive ion etchers generally use recipe control over gas flow, chamber pressure, RF power, and time to shape etch rate, selectivity, and profile.
Reactive ion etchers are typically placed after masking has defined areas to be opened in a film or substrate surface. Reactive ion etchers are commonly followed by resist stripping, chamber cleaning, metrology, or the next deposition or implant step, depending on the device flow.
The 790 series RIE is used to etch silicon dioxide, silicon nitride, and various polymers. The system allows substrates including silicon, silicon dioxide, glass, sapphire, mica, and ceramic. The system allows masking materials including PMMA, photoresist, and metals such as aluminum, gold, titanium, chromium, and tungsten.[3]
Documented failure modes, common issues, and field considerations.
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
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The 790 series RIE uses oxygen, nitrogen, sulfur hexafluoride, trifluoromethane, and nitrous oxide as etching gases.[3]
The maximum RF power of the 790 series RIE is 500 W.[3]
The control program has both manual and automatic modes. The system can program frequently used sequences and run them in automatic mode.[3]
The following facts about the 790 Series RIE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 790 Series RIE are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 790 Series RIE are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 790 Series RIE are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the 790 Series RIE is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the 790 Series RIE are on record.
Answerable by: an OEM parts catalog or a service engineer
Last updated Oct 19, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.