SPTS
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The SPTS / STS Multiplex ICP is a dry etcher.[1]
The SPTS / STS Multiplex ICP is an inductively coupled plasma (ICP) dry etching system used in semiconductor manufacturing.[1]
ICP dry etchers generate a high-density plasma using a radio-frequency coil wrapped around a dielectric chamber, allowing independent control of ion density and ion energy.
The system typically operates at low pressure to achieve anisotropic profiles.
Dry etching is a key subtractive process in semiconductor fabrication used to transfer photoresist patterns into underlying thin films or substrate materials.
The etching step occurs after lithographic patterning and before subsequent deposition, cleaning, or metrology steps.
ICP etchers are used to etch a variety of materials including silicon, silicon dioxide, silicon nitride, and metals.
Applications include deep silicon etching (e.g., Bosch process) for MEMS devices and through-silicon vias.
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The following facts about the Multiplex ICP Dry are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No specifications for the Multiplex ICP Dry are on record.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Multiplex ICP Dry are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Multiplex ICP Dry are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Multiplex ICP Dry are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Multiplex ICP Dry are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
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Last updated Sep 1, 2026.