Sumitomo

Ion implantation is used after a wafer has received prior films or patterned masking layers that define where dopants will enter the substrate. Ion implantation is followed by thermal steps that activate dopants and repair crystal damage, and the implanted regions then feed into later device fabrication steps such as contact formation and interconnect build.
High current ion implanters are used for dopant introduction in semiconductor device fabrication. Typical applications include source and drain formation, well engineering, contact-related implants, and other process stages where controlled dose placement in selected regions of the wafer is required.
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The Sumitomo SEN NV GSD III 180 is a high current ion implanter.[1][2]
The Sumitomo SEN NV GSD III 180 is configured for 6 inch wafers.[1][2]
The following facts about the SEN NV GSD III 180 High Current Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the SEN NV GSD III 180 High Current Ion are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the SEN NV GSD III 180 High Current Ion are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the SEN NV GSD III 180 High Current Ion are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the SEN NV GSD III 180 High Current Ion are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the SEN NV GSD III 180 High Current Ion is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 20, 2026.
The Varian 0216 7696, E 11368072 ESC is an electrostatic chuck (ESC) platen of the ADV-S type, categorized under ion implantation equipment.
The Varian 160 XP is an ion implanter. A variant, the Varian 160 XP Ion, is configured as a 150 mm high-current implanter.
The Varian 160 XP Ion is an ion implantation tool configured as a 150mm high-current implanter.