Sumitomo
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Sumitomo SHX Ion is an ion implanter manufactured by Sumitomo, categorized as ion implantation equipment. The Sumitomo SHX Ion is configured with a chiller and two Trans CRYO-Compressors.[1][2]

The Sumitomo SHX Ion is an ion implantation tool.[2]
The Sumitomo SHX Ion belongs to the Sumitomo SHX Ion family.[3][2]
An ion implanter accelerates charged dopant ions and directs them into a semiconductor wafer to modify near-surface electrical properties.
Ion implantation equipment generally combines an ion source, beam transport, mass selection, and a wafer-handling stage so the implanted dose and depth can be controlled.
Ion implantation sits in the front-end process flow after patterning steps define where dopants are needed and before thermal steps activate implanted species and repair lattice damage.
Ion implantation equipment is used in semiconductor fabrication for precise doping of device regions that require controlled electrical characteristics.
Ion implantation is used for semiconductor doping operations that create source, drain, well, and threshold-adjustment regions.
Ion implantation equipment is used on wafers in integrated-circuit manufacturing where localized composition and electrical profiles must be controlled.
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
No research found yet — worked with this tool? Share what you know.
Ion implanters commonly process dopants such as boron, phosphorus, arsenic, and antimony. The specific capability depends on the machine configuration and installed source hardware.
Dose is controlled by measuring beam current over exposure time, typically with a Faraday cup. Energy is controlled by the acceleration voltage applied to the extraction and post-analysis optics.
Yes, like other implanters, it is designed to implant through openings in masks or resist so that only exposed areas are doped. The resist remains in place through the implant and is removed later.
The following facts about the SHX Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the SHX Ion are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the SHX Ion are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the SHX Ion are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the SHX Ion are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the SHX Ion is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Last updated Oct 13, 2026.
The Varian 0216 7696, E 11368072 ESC is an electrostatic chuck (ESC) platen of the ADV-S type, categorized under ion implantation equipment.
The Varian 160 XP is an ion implanter. A variant, the Varian 160 XP Ion, is configured as a 150 mm high-current implanter.
The Varian 160 XP Ion is an ion implantation tool configured as a 150mm high-current implanter.