Tokyo Electron
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Plasma oxide etchers typically expose patterned wafers to reactive gases in a vacuum process chamber. Plasma oxide etchers generally combine ion bombardment with chemical reactions so that oxide is removed more strongly in exposed regions than in protected regions. Plasma oxide etchers commonly use process control over gas flow, pressure, power, and time to shape etch rate, profile, and selectivity.
Oxide etch equipment sits after lithography and resist development when a dielectric pattern must be transferred into the underlying film. Oxide etch equipment is commonly followed by resist strip and cleaning, with later deposition, implant, or metallization steps depending on the device flow.
Oxide etchers are used for patterning dielectric layers in integrated device fabrication. Oxide etchers commonly support contact formation, via formation, trench definition, hard mask transfer, and isolation-related dielectric shaping wherever silicon oxide or related dielectric films must be etched with patterned control.
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The following facts about the Tactras Vigus Oxide are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Tactras Vigus Oxide are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Tactras Vigus Oxide are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Tactras Vigus Oxide are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Tactras Vigus Oxide are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Tactras Vigus Oxide is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 16, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.