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Veeco

K 465 GaN MOCVD

DepositionVeeco K 465 GaN MOCVD family
Research Quality: 50% complete

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

K 465 GaN MOCVD — Inventory photo
Fig. 01K 465 GaN MOCVDInventory photo[1]

Power

3 Phase, 5 Wire[1]

Vacuum

K465 GaN Turbo disk[1]

What it is

The Veeco K 465 is a GaN metal organic chemical vapor deposition system used for semiconductor deposition.[1][2][3][4][5]

How it works

General reference — not yet source-verified

Metal organic chemical vapor deposition is a vapor-phase epitaxial growth method in which reactive precursor gases are delivered into a process chamber and decomposed at the heated substrate surface to form thin semiconductor layers. A GaN MOCVD tool is used for compound-semiconductor layer deposition rather than patterning or inspection.

Where it fits in the process flow

General reference — not yet source-verified

This type of equipment sits in the deposition segment of semiconductor fabrication, where it forms epitaxial or functional layers before later patterning, etching, and metallization steps.

For GaN device manufacturing, MOCVD is commonly used early in the material build sequence to create active and buffer layers on suitable substrates.

Applications

General reference — not yet source-verified

A GaN MOCVD system is used for gallium nitride epitaxial growth in compound-semiconductor manufacturing.

This class of tool is used for deposition of semiconductor films for devices that rely on wide-bandgap materials.

What do the numbers mean?

Power & electrical2

Phase
3 Phase, 5 Wire[1]
Accurate?
Voltage
380 Vac, 280 A, 50/60 Hz[1]
Accurate?

Vacuum & pumping1

K465 GaN Turbo disk[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ConfigurationK465 GaN Turbo disk[1]
  • Phase3 Phase, 5 Wire[1]
  • Voltage380 Vac, 280 A, 50/60 Hz[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What kind of deposition tool is this?General reference — not yet source-verified

It is a metal-organic chemical vapor deposition system used to grow epitaxial compound semiconductor films from vapor-phase precursors.

What does this class of machine deposit?General reference — not yet source-verified

It deposits crystalline semiconductor layers by causing reactive gases to form a solid film on a heated substrate surface.

Where is this equipment used in the manufacturing flow?General reference — not yet source-verified

It is used during epitaxial layer growth, before device patterning and other back-end fabrication steps.

Why is this class important for compound semiconductors?General reference — not yet source-verified

It enables controlled growth of layers whose composition, thickness, and crystal quality are important for device performance.

What kinds of processes use this class of tool?General reference — not yet source-verified

It is used for depositing gallium nitride and related epitaxial structures for electronic and optoelectronic devices, as well as for development work on layered semiconductor materials.

Not publicly documented

The following facts about the K 465 GaN MOCVD are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the K 465 GaN MOCVD are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the K 465 GaN MOCVD are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the K 465 GaN MOCVD are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the K 465 GaN MOCVD are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the K 465 GaN MOCVD is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (6)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Inventory photo
  3. [3]Inventory photo
  4. [4]Equipment inventory listing
  5. [5]Equipment inventory listing
  6. [6]VEECO - Solutions for a nanoscale worldveeco.com (Jan 26, 2008)web.archive.org
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Last updated Jul 29, 2026.

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