2400 G 2 MOCVD Reactor

The Aixtron 2400 G 2 is a metal organic chemical vapor deposition (MOCVD) reactor.^[1]

In MOCVD, metalorganic precursor compounds are transported by a carrier gas into a reactor chamber. The precursors undergo thermal decomposition and chemical reaction at the surface of a heated substrate, resulting in the deposition of a thin crystalline film. Excess gases and byproducts are removed by the gas flow system.

The process operates at reduced or atmospheric pressure and relies on precise control of temperature, gas flow rates, and precursor concentrations to achieve specific film compositions and layer thicknesses.

MOCVD is typically used for the epitaxial growth of III-V compound semiconductors and other heterostructures. The reactor is placed in the front-end of a compound semiconductor fabrication line, after substrate preparation and before device patterning and metallization steps.

Upstream processes include substrate cleaning and buffer layer growth; downstream steps involve photolithography, etching, and contact formation to create finished electronic or optoelectronic devices.

MOCVD reactors are employed to manufacture a range of optoelectronic and electronic devices. Common applications include light-emitting diodes (LEDs), laser diodes, high-electron-mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), and multi-junction solar cells.

The technique is also used for producing advanced compound semiconductor materials such as gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), and related ternary or quaternary alloys.