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Aixtron

AIX G 4

DepositionAixtron AIX family
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The Aixtron AIX G 4 is a deposition system for epitaxial processes. The Aixtron AIX G 4 processes 4-inch wafers for GaN deposition. The Aixtron AIX G 4 uses process gases NH3, H2, and SiH4.[1]

AIX G 4 — Inventory photo
Fig. 01AIX G 4Inventory photo[1]

Power

3 Phase[1]

Vacuum

Main Pump[1]

Gas delivery

NH3, H2, SiH4[1]

What it is

The Aixtron AIX G 4 is a deposition system for epitaxial growth of gallium nitride (GaN).[1]

How it works

General reference — not yet source-verified

MOCVD reactors like the AIX G 4 operate by delivering metalorganic precursors and hydride gases into a heated reaction chamber, where the gases decompose and deposit epitaxial layers onto a heated substrate.

Where it fits in the process flow

General reference — not yet source-verified

The AIX G 4 is used in the front-end of semiconductor fabrication for epitaxial deposition, a step that follows substrate cleaning and precedes subsequent device patterning and contact formation.

For GaN-based devices, the system typically grows buffer layers, n-type and p-type GaN, and sometimes InGaN quantum wells, with the substrate prepared upstream and the epiwafer moving downstream to lithography and etch processes.

What do the numbers mean?

Power & electrical5

Phase
3 Phase[1]
Accurate?
Voltage
208V[1]
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RF Generator[1]
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Power
3 Phase - 208V[1]
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RF Generator
Included[1]
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Vacuum & pumping2

Main Pump[1]
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Main Pump
Included[1]
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Wafer handling1

Wafer Size
4 inch[1]
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Gas & chemistry4

Process Gas
NH3, H2, SiH4[1]
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Process Gas
NH3[1]
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Process Gas
H2[1]
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Process Gas
SiH4[1]
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Configuration & options13

Process
EPI[1]
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Process
GaN[1]
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Glove Box[1]
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GMS[1]
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Particle Filter[1]
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Cable Box[1]
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Transformer[1]
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Vintage
2009[1]
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Glove Box
Included[1]
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GMS
Included[1]
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Particle Filter
Included[1]
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Cable Box
Included[1]
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Transformer
Included[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Phase3 Phase[1]
  • Voltage208V[1]
  • Process GasNH3, H2, SiH4[1]
  • ConfigurationMain Pump[1]
  • ConfigurationRF Generator[1]
  • Process GasNH3[1]
  • Process GasH2[1]
  • Process GasSiH4[1]
  • Power3 Phase - 208V[1]
  • Main PumpIncluded[1]
  • RF GeneratorIncluded[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the AIX G 4 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the AIX G 4 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the AIX G 4 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the AIX G 4 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the AIX G 4 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the AIX G 4 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]Inventory photo
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Last updated Aug 17, 2026.

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