Applied Materials
Centura AP Enabler Dielectric
Wafer size
Diameter 300+/- 0.05mm(SEMI M28), 775 +/- 25um, Notch
Power
208V, 50/60Hz[1]
Vacuum
SMC pressure switch[1]
Gas delivery
C4F6 100 sccm UNIT IFC-125[4]
What it is
General reference — not yet source-verifiedDielectric etchers are plasma dry etch tools used to remove insulating films with patterned selectivity during semiconductor fabrication. Dielectric etchers typically sit in the pattern transfer portion of front-end or interconnect processing, where they open or shape oxide-based and related nonconductive layers after lithography and before subsequent deposition, clean, or strip steps.
How it works
General reference — not yet source-verifiedDielectric etchers generally transfer patterned features by generating a low-pressure plasma from process gases and directing ion-assisted chemical reactions at the wafer surface. Cluster etch systems generally move wafers from loadports through load locks into a vacuum transfer module, where a robot serves multiple process chambers without returning wafers to atmosphere between steps.
Where it fits in the process flow
General reference — not yet source-verifiedDry dielectric etch tools fit after photoresist patterning when a wafer needs a mask pattern transferred into an insulating film. Dry dielectric etch tools are commonly followed by resist strip, post-etch clean, metrology, or the next deposition step, depending on whether the etched structure is an opening, trench, via, spacer, or hard-mask feature.
Applications
General reference — not yet source-verifiedDielectric etchers are used for patterning insulating materials in device and interconnect fabrication. Typical applications for this equipment class include contact and via opening, trench formation, hard-mask transfer, spacer-related etch steps, and other plasma etch operations on dielectric stacks where profile control and selectivity are important.
What do the numbers mean?
Power & electrical6
- RF Gen Top (162MHz Source)
- 3500W RF POWER SUPPLY, 162 MHZ, FIXED FREQUENCY, 208VAC, WATER COOLED (0190-29389)[4]
Vacuum & pumping7
Wafer handling10
Gas & chemistry14
Control & software4
Configuration & options25
- HDD not included[1]
- MENV and FMS assemblies[1]
- EMO Type
- Turn to Release (Front x3, Rear x4) - 3 on FI, 1 on front of FI and one on each side of FI. Rear: 1 for each process chamber.[1]
- System Monitors
- Monitor #1 is Flat Panel with Keyboard on stand / Monitor #2 is through the wall flat panel (optional)[1]
Vintage & configurations
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Centura AP Enabler E5 | — | 2010 | Dielectric Etcher with 4 process chambers; Fab Interface type: Centura Etch 5.3 FAC; Frame 5.3 Fi Rev 002 | fabsurplus.com[4] |
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Facility PlateN2 Regulator : Supplied by customer in floor, CDA regulator 125 PSI onboard[1]
- ConfigurationSMC pressure switch[1]
- Facility PlatePressure Gauge : Supplied by customer on regulator in floor[1]
- Transfer Pressure Monitor10 Torr Manometer and 1SLM N2 APC, kit[1]
- Transfer Pressure MonitorGAUGE VAC MINI-CONVECTRON W/1-SETPOINT CAJON FTG analog[1]
- Load Lock Pressure MonitorGAUGE VAC MINI-CONVECTRON W/1-SETPOINT CAJON FTG analog[1]
- Voltage208V, 50/60Hz[1]
- RF Gen Top (162MHz Source)3500W RF POWER SUPPLY, 162 MHZ, FIXED FREQUENCY, 208VAC, WATER COOLED (0190-29389)[4]
- RF Gen #1 Bottom (13MHz Bias)RF GENERATOR, 13MHZ 5KW, 300MM, RACK MOUNT (0190-15319)[4]
- RF Gen #2 Bottom (2MHz Bias)RF GEN PLASMA 9KW 2MHZ ENI (0190-29586)[4]
- Dry PumpN(ESR80WN (EBARA); customer Supply)[4]
- Chamber Controller ModuleSBC C400MHZ, 3U CPCI, 256MB RAM[4]
- Gas Line 1C4F6 100 sccm UNIT IFC-125[4]
- Gas Line 2CH2F2 100 sccm UNIT IFC-125[4]
- Gas Line 3C3F8 50 sccm UNIT IFC-125[4]
- Gas Line 4O2_M 300 sccm UNIT-125[4]
- Gas Line 5SO2 200 sccm UNIT IFC-125[4]
- Gas Line 6CF4 200 sccm UNIT IFC-125[4]
- Gas Line 7C4F6_IGI 5 sccm UNIT-125[4]
- Gas Line 8O2_IGI 5 sccm UNIT-125[4]
- Gas Line 9O2_L 50 sccm UNIT-125[4]
- Gas Line 10O2_H 5000 sccm UNIT-125[4]
- Gas Line 11Ar 2000 sccm UNIT-125[4]
- Gas Line 12N2 200 sccm UNIT-125[4]
- Gas Line 13CHF3 200 sccm UNIT-125[4]
- Gas Line 14C4F8 100 sccm UNIT-125[4]
- Power208V, 50/60Hz[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What process issues matter most in this class of tool?General reference — not yet source-verified
Key concerns include uniformity, selectivity to masks and stop layers, feature profile control, residue management, microloading behavior, and avoidance of charging or plasma-induced damage. Process tuning is aimed at achieving the desired etch result while protecting neighboring films and critical dimensions.
Not publicly documented
The following facts about the Centura AP Enabler Dielectric are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Centura AP Enabler Dielectric are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the Centura AP Enabler Dielectric are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Centura AP Enabler Dielectric are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Centura AP Enabler Dielectric is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Centura AP Enabler Dielectric are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]fabsurplus.comfabsurplus.com
- [3]fabsurplus.comfabsurplus.com
- [4]fabsurplus.com — fabsurplus.comfabsurplus.com
Last updated Oct 19, 2026.
Compare with similar tools
View all →The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.
