Applied Materials
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The Centura II eMax is an etcher from Applied Materials with 8-inch wafer support. The Centura II eMax uses four eMax chambers. The Centura II eMax belongs to the Centura family.[1][2]
The Centura II eMax operates by generating a plasma in a low-pressure chamber. Reactive ions and radicals in the plasma chemically and physically etch exposed layers on the wafer surface. The system may employ multiple process chambers to allow sequential etch steps without breaking vacuum.
In semiconductor fabrication, dry etch systems like the Centura II eMax are used after lithography to transfer patterns by removing material from regions not protected by photoresist. The etched wafer then proceeds to resist stripping and subsequent metrology or deposition steps.
The Centura II eMax is applied to dry etch processes in semiconductor manufacturing, including etching of dielectric and conductor films for both front-end-of-line and back-end-of-line integration.
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The following facts about the Centura II eMax are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Centura II eMax are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Centura II eMax are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Centura II eMax are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Centura II eMax are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Centura II eMax is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 12, 2026.
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