NV GSD 100

The Axcelis NV GSD 100 is an ion implanter. The Axcelis NV GSD 100 has 3-phase input, 208 V input, 160 kV output, 50 kVA power, and 15 mA current. The Axcelis NV GSD 100 features Electron Shower, direct drive, Cell V6, Solaris, and an SDS Gas Box.^[1][2][3]

Ion implanters generate a beam of ionized dopant species, accelerate the ions in an electric field, and direct the beam toward semiconductor wafers so selected atoms enter the surface. Ion implantation is used to control dopant placement by beam energy, beam current, dose, and wafer handling under vacuum.

Ion implanters commonly include beam-generation hardware, ion optics, wafer handling, vacuum subsystems, and controls for recipe execution and dose delivery. Ion implanters may also use charge-control measures at the wafer surface during exposure to limit charging effects on patterned or insulating layers.

Ion implantation tools are used in front-end semiconductor processing after films, masking layers, or patterned resist define where dopants should enter the wafer. Implant steps are generally followed by thermal processing that activates dopants and repairs lattice damage caused by ion bombardment.

Ion implanters are used for semiconductor doping steps such as well formation, threshold adjustment, source and drain formation, and other junction engineering tasks. Ion implantation is also used where precise dose control and selective area doping are needed in device fabrication.