NV GSD 200

Ion implanters are semiconductor processing tools that introduce dopant ions into a wafer in a controlled beam. Ion implanters are used to set conductivity profiles in selected regions of devices after patterned masking steps. Ion implantation belongs to front end device fabrication and is commonly integrated with lithography, film deposition, annealing, and cleaning operations.

Ion implanters generate ions from a dopant source, separate the desired species, accelerate the beam, and deliver a controlled dose to the wafer. Ion implanters generally use beamline elements for extraction, mass analysis, focusing, scanning, and dose control. Ion implantation changes near surface electrical properties without the furnace diffusion approach used in older doping flows.

Ion implantation is used after a masking layer or patterned resist defines where dopants should enter the wafer. Ion implantation is followed by thermal treatment that activates dopants and repairs implantation damage. Ion implantation can appear repeatedly through device fabrication for well formation, threshold adjustment, source and drain formation, and related junction engineering steps.

Ion implanters are applied where controlled dopant placement is needed in semiconductor device fabrication. Ion implantation supports formation of active regions and electrically tuned structures in integrated circuits and related wafer based devices. Ion implantation is also used when process engineers need repeatable dose control with patterned selectivity set by masking layers.