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Axcelis

NV GSD 200 E 2 Ion

Ion ImplantationAxcelis NV GSD 200 family
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NV GSD 200 E 2 Ion — Inventory photo
Fig. 01NV GSD 200 E 2 IonInventory photo[1]

Power

CTI 9650 Low-Voltage[1]

Vacuum

Seiko STP A 2203 fully refurbished[1]

What it is

The Axcelis NV GSD 200 E 2 Ion is an ion implantation tool.[1][2][3]

Where it fits in the process flow

General reference — not yet source-verified

Ion implantation is a front-end semiconductor process step used after patterned masking and before annealing or subsequent thermal activation steps.

Ion implantation is used to adjust electrical properties in selected regions of a wafer rather than across the entire surface.

Applications

General reference — not yet source-verified

Ion implantation is used for semiconductor doping, threshold adjustment, and formation of source, drain, well, and channel engineering regions.

What do the numbers mean?

Power & electrical5

Cryo-Kompressor
CTI 9650 Low-Voltage[1]
Accurate?
High voltage-Transformer
Oil[1]
Accurate?
Voltage
208V[2]
Accurate?
High voltage-Transformer Source
Oil[2]
Accurate?
High voltage-Transformer Terminal
Oil[2]
Accurate?

Vacuum & pumping13

Cryo-Pumps
CTI/Edwards Onboard; OB-8 + OB-10 fully refurbished[1]
Accurate?
Turbo-Pumps
Seiko STP A 2203 fully refurbished[1]
Accurate?
Terminal-Rough-Pump
without (Edwards IGX Config)[1]
Accurate?
End station Rough-Pump
without (Edwards IGX Config) bottom remote external[1]
Accurate?
Gas box
5-String, 4x 2L Low-Pressure[1]
Accurate?
String 1
Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3[1]
Accurate?
String 2
BF3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3; PN:10010380[1]
Accurate?
String 3
Ash3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3; PN:10010380[1]
Accurate?
String 4
Ph3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3; PN:10010380[1]
Accurate?
Cryo-Pumps
CTI/Edwards Onboard: OB-8 + OB-10[2]
Accurate?
Source-Turbo-Pump
Seiko/Edwards STPA2203C[2]
Accurate?
Beamline-Turbo Pump
Oerlikon MAG W 1300 C[2]
Accurate?
Endstation Rough-Pump
without (Edwards IGX Config)[2]
Accurate?

Wafer handling3

String 5
Argon Carriergas; MFC Brooks GF120 10sccm-N2[1]
Accurate?
Wafer Sizes
8 inch[1]
Accurate?
Wafersize
200mm[2]
Accurate?

Control & software4

Software-Version
6.13.5.1 (no license included)[1]
Accurate?
Cell-Controller
V6 Type[1]
Accurate?
Software-Version
8.2.1[2]
Accurate?
Software-Version
8.2.1 (no license included)[2]
Accurate?

Configuration & options13

Disk-Drive
Direct-Drive[1]
Accurate?
Dose-Type
Regular[1]
Accurate?
Source-Type
ELS4 IHC-Source without Vaporizer[1]
Accurate?
Light-Tower
red/yellow/green; no buzzer[1]
Accurate?
Main-Workstation
SUN Solaris AXI 3HE (special case)[1]
Accurate?
Network
24 port 100MB Ethernet with Cisco Router-Kit[1]
Accurate?
Energy Config
0 - 160Kv High current[2]
Accurate?
CE-Conformity
Yes[2]
Accurate?
Make
Axcelis[1]
Accurate?
Model
NV GSD 200 E 2[1]
Accurate?
Disk-Type
Si-coated Disk[2]
Accurate?
Gasbox
5-String, 4x 2L Size[2]
Accurate?
Dose-Type
Power-Dose[2]
Accurate?
Interested in this tool?
Need help with this tool?Embed spec card

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Cryo-PumpsCTI/Edwards Onboard; OB-8 + OB-10 fully refurbished[1]
  • Cryo-KompressorCTI 9650 Low-Voltage[1]
  • Turbo-PumpsSeiko STP A 2203 fully refurbished[1]
  • Terminal-Rough-Pumpwithout (Edwards IGX Config)[1]
  • End station Rough-Pumpwithout (Edwards IGX Config) bottom remote external[1]
  • Gas box5-String, 4x 2L Low-Pressure[1]
  • String 1Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3[1]
  • String 2BF3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3; PN:10010380[1]
  • String 3Ash3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3; PN:10010380[1]
  • String 4Ph3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3; PN:10010380[1]
  • High voltage-TransformerOil[1]
  • Voltage208V[2]
  • Cryo-PumpsCTI/Edwards Onboard: OB-8 + OB-10[2]
  • Source-Turbo-PumpSeiko/Edwards STPA2203C[2]
  • Beamline-Turbo PumpOerlikon MAG W 1300 C[2]
  • Endstation Rough-Pumpwithout (Edwards IGX Config)[2]
  • High voltage-Transformer SourceOil[2]
  • High voltage-Transformer TerminalOil[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Worked with this tool? Help preserve its knowledge →

Frequently asked questions

How does the machine control implant depth?General reference — not yet source-verified

Implant depth is set mainly by the energy of the ion beam; higher energy drives ions deeper into the substrate, while lower energy deposits them closer to the surface.

Why is annealing required after implantation?General reference — not yet source-verified

Implantation damages the crystal lattice and leaves dopant atoms electrically inactive; a thermal anneal repairs the damage and moves dopant atoms onto lattice sites where they become electrically active.

What determines the implant dose?General reference — not yet source-verified

The dose is determined by integrating the electrical current delivered by the ion beam over the implant time, allowing precise control of the number of ions placed in the substrate.

Not publicly documented

The following facts about the NV GSD 200 E 2 Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NV GSD 200 E 2 Ion are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the NV GSD 200 E 2 Ion are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the NV GSD 200 E 2 Ion are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the NV GSD 200 E 2 Ion are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the NV GSD 200 E 2 Ion is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Inventory photo
  3. [3]NV GSD 200 E 2 Ion — Axcelis | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
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Last updated Oct 13, 2026.

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