9380 CD-SEM

A CD-SEM is a semiconductor metrology and inspection tool that uses electron imaging to measure patterned features on wafers. CD-SEMs are used to check linewidth, space, profile-related image information, and pattern fidelity after lithography and etch steps.

A CD-SEM forms an image by scanning a focused electron beam across a small region of a patterned wafer and detecting emitted signals from the surface. CD-SEM measurement software then derives dimensional information from image edges and other contrast features in the scanned pattern.

CD-SEMs typically combine wafer handling, stage positioning, electron-optical column control, imaging, and recipe-based measurement in one metrology platform. CD-SEMs generally support repeated measurement at selected sites so process engineers can monitor pattern variation across process steps.

CD-SEMs are placed in the process-control flow around patterning operations. CD-SEMs are commonly used after photoresist development to verify printed dimensions and after etch to confirm the transferred pattern.

CD-SEM results are used to evaluate lithography and pattern-transfer performance and to guide adjustments in exposure, focus, resist processing, and etch conditions. CD-SEM measurements therefore connect inspection activity with process tuning and yield control.

CD-SEMs are used for dimensional measurement of semiconductor patterns such as lines, spaces, contacts, holes, and other repeated features. CD-SEMs are applied where optical techniques may have limited sensitivity to very small pattern details or edge definition.

CD-SEM work commonly supports process development, production monitoring, excursion analysis, and correlation between lithography output and downstream pattern transfer. CD-SEMs are also used to review pattern anomalies at measurement sites while preserving a metrology-oriented workflow.