Oxford Instruments
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It removes material from selected areas of a substrate by using a plasma-based dry process, allowing patterned structures to be transferred from a mask into the underlying layer.
Plasma etching is used when directional removal, tighter profile control, or better feature definition is needed. It is especially useful when the process must follow a patterned mask closely.
Such systems are used on a range of thin films and substrate materials common in semiconductor and precision microfabrication work, with process chemistry chosen to match the material being removed.
It is a pattern transfer tool used during the sequence of steps that turn a designed mask pattern into a physical structure on the substrate.
Important variables include the gas mixture, plasma conditions, chamber environment, and etch time, since these determine material removal behavior and feature shape.
The following facts about the Plasmalab 100 ICP 180 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab 100 ICP 180 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Plasmalab 100 ICP 180 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Plasmalab 100 ICP 180 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Plasmalab 100 ICP 180 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Plasmalab 100 ICP 180 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Jul 29, 2026.