6 DF DC 1

CMP equipment performs chemical mechanical polishing on wafer surfaces. CMP combines slurry chemistry with mechanical contact at a polishing pad or table to remove material and improve surface planarity. CMP tools are used in semiconductor manufacturing flow after deposition or patterning steps when a flatter surface is needed for subsequent processing.

The Strasbaugh 6 DF DC 1 includes variable speed control with DC electronic drives and a 0 to 100 RPM range. The Strasbaugh 6 DF DC 1 includes a digital tachometer, a digital timer, a load meter, and an alarm system. The Strasbaugh 6 DF DC 1 includes a stainless steel square slurry pan with a sloped drain and a slurry manifold with an adjustable Snaploc line and flow valve. The Strasbaugh 6 DF DC 1 includes high downforce polishing. The Strasbaugh 6 DF DC 1 has a 22 inch diameter polishing table. The Strasbaugh 6 DF DC 1 has a 10 inch diameter stainless steel wafer carrier with a W-bearing, a nylon quill insert, and a flatness specification of 0.0001 inch over 10 inches. The Strasbaugh 6 DF DC 1 has a polishing table flatness specification of 0.0001 inch.^[1][2]

CMP is used where a wafer surface must be flattened or thinned before later fabrication steps. CMP commonly fits between film formation steps and later lithography, etch, or metallization steps because surface topography can affect pattern transfer and layer stacking. CMP can also be used in substrate preparation and in post-deposition finishing flows.

CMP tools are applied to planarization and surface finishing tasks in semiconductor and related wafer processing. CMP can be used on dielectric, metal, and substrate surfaces when a process requires controlled material removal and improved surface uniformity. CMP equipment is also used in development and specialty manufacturing flows where polishing conditions must be adjusted for different materials or targets.