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Toho Technology

FLX-2320-S

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This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The Toho Technology FLX-2320-S measures the change in the radius of curvature of a substrate to determine thin film stress.[1]

FLX-2320-S — epfl.ch
Fig. 01FLX-2320-Sepfl.ch[1]
  • Plate 01KLA-Tencor FLX-2320 Film Stress Measurement System (ID# 4344)

    ClassOneEngineeringWatch on YouTube

Performance

1 x 10^7 dyne/cm²[2]

Optics

670 nm and 780 nm[2]

What it is

The Toho Technology FLX-2320-S is a thin film stress measurement system. The Toho Technology FLX-2320-S measures the change in the radius of curvature of a wafer or substrate caused by the deposition of a stressed thin film. The Toho Technology FLX-2320-S is offered for stress measurements on films and substrates up to 200 mm in diameter. The Toho Technology FLX-2320-S is configured as a tabletop system.[1][2][5][6][3]

How it works

The Toho Technology FLX-2320-S determines stress by measuring substrate curvature before film deposition and again after deposition. The Toho Technology FLX-2320-S uses the difference between the pre-deposition and post-deposition curvature to calculate stress with Stoney’s equation. The Toho Technology FLX-2320-S measures curvature by directing a laser at the wafer surface and detecting the reflected beam with a position-sensitive photodiode. The Toho Technology FLX-2320-S records surface geometry by scanning across the wafer.[1][2]

The Toho Technology FLX-2320-S incorporates dual wavelength technology. The Toho Technology FLX-2320-S can select the wavelength most suitable for a given film, including transparent films such as silicon nitride. The Toho Technology FLX-2320-S provides in-situ stress measurement for thermal stress work from -65°C to 500°C, with heating rates up to 30°C per minute. The Toho Technology FLX-2320-S has optional cooling capability to -65°C and can support controlled atmospheres with nitrogen or argon inert flush capability.[2][6][3]

Where it fits in the process flow

General reference — not yet source-verified

Thin film stress measurement tools are metrology instruments used around deposition and thermal processing steps. Thin film stress measurement tools are typically used after a baseline substrate measurement and then again after film formation to quantify how the added layer changes wafer bow or curvature. Thin film stress measurement helps connect deposition conditions and thermal history to mechanical behavior in the film stack.

Applications

The Toho Technology FLX-2320-S is used to investigate stress-related process problems such as metal and dielectric film cracking, voiding, and lifting formation. The Toho Technology FLX-2320-S is used for stress-temperature correlation work and for characterizing stress relaxation, moisture evolution, and phase changes. The Toho Technology FLX-2320-S includes analysis functions for stress uniformity, wafer topography views, and stress-temperature plotting.[2][6][3]

  • Thin-film stress measurement

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • The FLX-2320-S uses a blank wafer and patterned wafers will not work.
  • The FLX-2320-S requires a reflective wafer surface for the laser measurement.
  • The FLX-2320-S measurement is affected by rough wafer surfaces.

What do the numbers mean?

Power & electrical1

Power requirements
Measurement module 200-240 VAC, 50/60 Hz, 13 A; computer 115 VAC, 50/60 Hz, 5.4 A[2]
Accurate?

Wafer handling5

Measurement principle
Measures the change in the radius of curvature of a wafer or substrate caused by deposition of a stressed thin film.[1]
Accurate?
Measurement principle
Measures the change in radius of curvature of substrate before and after film deposition[1]
Accurate?
Function
Measures the change in the radius of curvature of a wafer or substrate caused by the deposition of a stressed thin film.[1]
Accurate?
Wafer sizes
50 mm (optional), 75 mm, 100 mm, 125 mm, 150 mm, and 200 mm[2]
Accurate?
Measurement speed
6 seconds per wafer[2]
Accurate?

Optics & imaging3

Laser wavelengths
670 nm and 780 nm[2]
Accurate?
Laser power
4 mW[2]
Accurate?
Compliance
Class IIIa laser at 670 nm and Class IIIb laser at 780 nm compliant with 21 CFR, Chapter 1, Subchapter J[2]
Accurate?

Performance2

Repeatability
1 x 10^7 dyne/cm²[2]
Accurate?
Accuracy
Less than 2.5% or 1 MPa, whichever is larger[2]
Accurate?

Control & software1

Analysis software platform
Windows 11 based analysis software[3]
Accurate?

Dimensions & facilities1

Physical characteristics
Measurement module height 46 cm, depth 46 cm, width 56 cm, weight 45.5 kg[2]
Accurate?

Configuration & options11

Use case
Thin-film stress measurement.[1]
Accurate?
Measurement principle
Change in radius of curvature[1]
Accurate?
Stress calculation method
Uses Stoney’s equation / the Stoney relationship[2]
Accurate?
Temperature range
Room temperature to 500°C; optional -65°C to room temperature[3]
Accurate?
Heating rate
Up to 30°C per minute[3]
Accurate?
Scan range
User programmable up to 200 mm[2]
Accurate?
Minimum scan step
0.02 mm[2]
Accurate?
Maximum points per scan
1250[2]
Accurate?
Measurement range
1 x 10^7 to 4 x 10^10 dyne/cm²[2]
Accurate?
Minimum radius
2.0 m[2]
Accurate?
Maximum radius
33 km[3]
Accurate?
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What replaced it?

  • siblingNanospec AFT-6100— Listed in the same optical measurement section of the EPFL CMi equipment portfolio as the Nanospec AFT-6100.source[4]

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Power requirementsMeasurement module 200-240 VAC, 50/60 Hz, 13 A; computer 115 VAC, 50/60 Hz, 5.4 A[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What does the Toho Technology FLX-2320-S measure?

The Toho Technology FLX-2320-S measures the change in the radius of curvature of a wafer or substrate caused by the deposition of a stressed thin film.[1]

How does the Toho Technology FLX-2320-S calculate thin film stress?

The Toho Technology FLX-2320-S calculates thin film stress from the difference between substrate curvature measured before deposition and after deposition, using Stoney’s equation.[1][2]

Not publicly documented

The following facts about the FLX-2320-S are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the FLX-2320-S are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the FLX-2320-S are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the FLX-2320-S are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the FLX-2320-S is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the FLX-2320-S are on record.

    Answerable by: an OEM parts catalog or a service engineer

Sources & citations

Sources (6)Every fact above is drawn from these public sources
  1. [1]epfl.ch — epfl.chepfl.ch
  2. [2]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  3. [3]tohotechnology.com — tohotechnology.comtohotechnology.com
  4. [4]epfl.chepfl.ch
  5. [5]Toho FLX-2320-S Wavelength Stress Measurement – Research Core Facilities — cores.research.utdallas.educores.research.utdallas.edu
  6. [6]https://www.tohotechnology.com/wp-content/uploads/2019/09/Toho_FLX2320S_D1.pdf — tohotechnology.comtohotechnology.com
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Last updated Oct 20, 2026.

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