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GaN Epitaxy and Compound Semiconductor Equipment
Gallium nitride (GaN) epitaxy uses MOCVD reactors, HVPE systems, and specialized MBE tools to grow device-quality III-nitride layers on silicon, sapphire, or SiC substrates. GaN enables high-voltage/high-frequency power devices and RF transistors. This page covers the required equipment categories and top tool picks for GaN-on-Si, GaN-on-SiC, and GaN-on-sapphire processes.
Required equipment categories
The following equipment categories are required for GaN epitaxy and compound semiconductor deposition equipment. Each link opens the full catalog for that category.
Find tools in the catalog
Search the Waferpedia catalog for specific tool models, OEM brands, and wafer sizes relevant to GaN epitaxy and compound semiconductor deposition equipment.