Advantest
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The Advantest T 5501 is a memory test system. The T 5501 supports GDDR3/4-SDRAM, SRAM, and DDR3-SDRAM memory devices. The T 5501 offers a maximum test rate of 1.066 GHz (2.133 GHz in DDR mode).[1]
The Advantest T 5501 supports source-synchronous measurement. The Advantest T 5501 uses a multi-strobe function to judge phase differences between device output data and a reference clock signal on a cycle-by-cycle basis. The Advantest T 5501 can perform measurement on up to 32 channels. The Advantest T 5501 offers a maximum test rate of 1.066 GHz, or 2.133 GHz in DDR mode.[1][3]
A semiconductor memory tester belongs in the electrical test portion of device manufacturing. Memory testers are used after wafer fabrication when memory die or packaged memory devices need functional and parametric verification before later sorting, assembly progression, or outgoing qualification.
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The following facts about the T 5501 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the T 5501 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the T 5501 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the T 5501 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the T 5501 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the T 5501 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 20, 2026.
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