SPTS

Wafer size
200mm
Gas delivery
Up to 4 precursors[1]
Process applications and technology nodes documented for this tool.
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| MVD300E | — | — | Described as the MVD300E with an EFEM. | web.archive.org[1] |
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
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The following facts about the MVD300 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the MVD300 are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the MVD300 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the MVD300 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the MVD300 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the MVD300 are on record.
Answerable by: an OEM parts catalog or a service engineer
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Last updated Jul 29, 2026.
The ASM E 2000 is a radiantly heated, single-wafer epitaxial reactor for chemical vapor deposition of doped or undoped silicon layers on wafers up to 200 mm (8 inches).
The SPTS MVD100E is a Molecular Vapor Deposition system designated for R&D or pilot manufacturing.