Epsilon 2000

The ASM Epsilon 2000 is a chemical vapor deposition tool. The ASM Epsilon 2000 is a single-wafer epitaxy tool. The ASM Epsilon 2000 supports 150 mm and 200 mm wafers. The ASM product line included the Epsilon 2000 PLUS within the Epsilon Series.^[2][6]

The Epsilon 2000 reactor uses integrated lamps to heat the wafer to a specified temperature to grow an epitaxial silicon-based film using chemical vapor deposition. The Epsilon 2000 has a patented Bernoulli wand for non-contact wafer transfer.^[2]

The Epsilon 2000 offers precise temperature control across the wafer surface, which enables highly uniform silicon layers. The Bernoulli wand wafer transfer technology allows high temperature wafer transfer without damage to wafer surfaces, which enables higher throughput than alternatives that must delay processing to allow wafer cooling. The Epsilon 2000 is optimized for ASM Silcore precursors. The Epsilon 2000 uses PowerFill trench fill processing to deposit epitaxial layers sequentially in deep trenches.^[2]

Epitaxy is used to improve the electrical characteristics of the wafer surface in a precisely controlled manner. Epitaxy makes the wafer suitable for manufacturing highly complex microprocessors and memory devices.^[6]

The Epsilon 2000 supports applications ranging from high-temperature silicon for wafer preparation to low-temperature selective or non-selective silicon germanium for forming transistor strain layers. The Epsilon 2000 is used for selective and non-selective doped silicon layers for transistor formation. The Epsilon 2000 is used for blanket silicon epitaxy for wafer manufacturing. The Epsilon 2000 is used for epitaxy for analog mixed signal, bipolar, and BiCMOS devices. The Epsilon 2000 is used for deep trench fill epitaxy for power devices.^[2]