ASM
Epsilon 2000
The ASM Epsilon 2000 is a CVD (Chemical Vapor Deposition) tool. The ASM Epsilon 2000 is a single-wafer epitaxy tool. The ASM Epsilon 2000 supports 150 mm wafers.[1][2]
How it works
The Epsilon 2000 uses integrated lamps to heat the wafer to the specified temperature for epitaxial growth. A distinctive feature of the reactor is the patented Bernoulli wand, which enables non-contact wafer transfer during high-temperature handling, reducing the risk of damage and allowing higher throughput. The system is optimized for use with ASM's Silcore precursors, which provide high deposition rates at relatively low temperatures.[2]
What do the numbers mean?
Power & electrical2
Vacuum & pumping2
Wafer handling5
Gas & chemistry2
Control & software1
Configuration & options14
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What wafer sizes does the ASM Epsilon 2000 support?
The ASM Epsilon 2000 supports 150 mm and 200 mm wafers.[2]
What heating method does the Epsilon 2000 use?
The Epsilon 2000 uses integrated lamps to heat the wafer to the specified temperature for epitaxial growth.[2]
What precursors are optimized for the Epsilon 2000?
The Epsilon 2000 is optimized for use with ASM's Silcore precursors, which provide high deposition rates at relatively low temperatures.[2]
Can the Epsilon 2000 be used for gallium arsenide (GaAs) epitaxy?
Yes, the Epsilon 2000 has been adapted for the growth of GaAs epitaxial layers by decomposing trimethylgallium (TMGa) and arsine (AsH3) at reduced pressure and temperatures in the 600-700°C range.[4]
Not publicly documented
The following facts about the Epsilon 2000 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Epsilon 2000 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Epsilon 2000 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Epsilon 2000 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Epsilon 2000 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Epsilon 2000 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (6)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]asm.com — asm.comasm.com
- [3]Inventory photo
- [4]Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth - IOPscience — iopscience.iop.orgiopscience.iop.org
- [5]Equipment inventory listing
- [6]EPITAXY - products — asm.com (Nov 20, 2014)web.archive.org
Last updated Sep 1, 2026.
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