Waferpedia

Alcatel

AMS 200 SE

EtchAlcatel AMS 200 SE family
Research Quality: 40% complete
AMS 200 SE — epfl.ch
Fig. 01AMS 200 SEepfl.ch[1]

Power

3 kW at 13.56 MHz[1]

Vacuum

3 to 15 mbar[1]

Gas delivery

SF6 and C4F8 can be used in pulsed mode[1]

What is it?

The AMS 200 SE is described as an optimized Deep Reactive Ion Etching (DRIE) system with an inductively coupled plasma source, temperature-controlled process chamber, electrostatic clamping chuck, laser-interferometry endpoint detection, and processes for silicon and dielectric etching.

What can it run?

Process applications and technology nodes documented for this tool.

  • Silicon etching
  • Silicon-on-insulator etching
  • Dielectric etching
  • Isotropic silicon release etching

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • The equipment is not microelectronic compatible.
  • Borosilicate (Pyrex) and sodalime (floatglass) wafers can be loaded only with a backside conductive layer.
  • For fused silica, Pyrex, and float glass wafers, a conductive backside layer is required because of the electrostatic clamping chuck.

What do the numbers mean?

Power & electrical3

Maximum ICP RF power
3 kW at 13.56 MHz[1]
Accurate?
Wafer biasing modes
RF (13.56 MHz) for dielectric etching and pulsed Low Frequency (LF) for silicon etching[1]
Accurate?
Maximum substrate holder bias power
600 W pulsed LF or 500 W RF[1]
Accurate?

Vacuum & pumping2

He backside pressure range
3 to 15 mbar[1]
Accurate?
Pumping
Adixen 1600 l/s turbo pump plus Adixen ADP122 rough pump[1]
Accurate?

Wafer handling4

Materials stated
Silicon (Si) and Silicon on Insulator (SOI) wafers[1]
Accurate?
Wafer cooling / clamping
Electrostatic Clamping Chuck (ESC) controlled in temperature for wafer cooling[1]
Accurate?
Substrate holder height adjustment
120 to 200 mm[1]
Accurate?
Substrate holder temperature range
-10 °C to +40 °C[1]
Accurate?

Gas & chemistry2

Gas lines
7 mass flow controllers and 6 gases: SF6, C4F8, CH4, O2, Ar, He[1]
Accurate?
Bosch process gases
SF6 and C4F8 can be used in pulsed mode[1]
Accurate?

Optics & imaging1

Endpoint detection
Laser interferometry through a top viewport[1]
Accurate?

Control & software1

GUI
Touch-screen Graphic User Interface (GUI)[1]
Accurate?

Configuration & options2

Equipment type
Optimized Deep Reactive Ion Etching (DRIE) system[1]
Accurate?
Plasma source
Inductive Coupled Plasma (ICP)[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
AMS200Referenced as the AMS200 system and described as the same equipment in the source text.epfl.ch[1]
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What replaced it?

  • siblingSTS Multiplex ICPListed in the same etching equipment section.source[1]
  • siblingSPTS RapierListed in the same etching equipment section.source[1]
  • siblingSPTS SynapseListed in the same etching equipment section.source[1]
  • siblingSPTS APSListed in the same etching equipment section.source[1]

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Maximum ICP RF power3 kW at 13.56 MHz[1]
  • He backside pressure range3 to 15 mbar[1]
  • Wafer biasing modesRF (13.56 MHz) for dielectric etching and pulsed Low Frequency (LF) for silicon etching[1]
  • Maximum substrate holder bias power600 W pulsed LF or 500 W RF[1]
  • PumpingAdixen 1600 l/s turbo pump plus Adixen ADP122 rough pump[1]
  • Gas lines7 mass flow controllers and 6 gases: SF6, C4F8, CH4, O2, Ar, He[1]
  • Bosch process gasesSF6 and C4F8 can be used in pulsed mode[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Not publicly documented

The following facts about the AMS 200 SE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the AMS 200 SE are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the AMS 200 SE are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the AMS 200 SE is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the AMS 200 SE are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the AMS 200 SE are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.chepfl.ch
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Last updated Jul 29, 2026.

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