Tokyo Electron

As a class, thermal and diffusion equipment is used to apply controlled heat to silicon wafers so that films can be grown or modified, dopants can be driven into material, and device structures can be stabilized after earlier patterning steps.
Thermal-processing furnaces and diffusion systems expose wafers to carefully controlled temperature profiles and process atmospheres. In this class of equipment, the combination of heat, time, and gas chemistry is used to change the electrical or physical properties of the wafer surface and near-surface regions.
In a fabrication flow, thermal and diffusion equipment sits after earlier wafer preparation and patterning steps and before later electrical test and assembly stages. It is used when a process requires a high-temperature step rather than a purely plasma, wet-chemical, or lithographic operation.
More generally, equipment of this class is used in mature-node semiconductor manufacturing for tasks such as activating dopants, healing implant damage, modifying oxide or dielectric films, and improving film uniformity and stability.
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| BBR3 DOPE | — | 2010 | Listed as a Tel Alpha 8 S configuration for 8-inch wafers. | Equipment inventory listing[2] |
| WELL DRIVE HT FIELD OX | — | 1997 | Listed as a Tel Alpha 8 S configuration for 8-inch wafers. | Equipment inventory listing[3] |
| D2 ANNEAL | — | 1995 | Listed as a Tel Alpha 8 S configuration for 8-inch wafers. | Equipment inventory listing[4] |
| DENSIFICATION | — | 1996 | Listed as a Tel Alpha 8 S configuration for 8-inch wafers. | Equipment inventory listing[5] |
| FSG ANNEAL | — | 1996 | Listed as a Tel Alpha 8 S configuration for 8-inch wafers. | Equipment inventory listing[6] |
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It performs controlled heat treatment of wafers so that materials, dopants, or thin films change their physical and electrical properties in a predictable way.
It is used in the wafer process flow after steps that create or place material that must be thermally modified, stabilized, or activated.
The main purpose is to use heat to move dopants or other species within a semiconductor structure so that regions with the desired electrical behavior are formed.
No. Machines of this class are also used for annealing, oxidation, film densification, stress relief, and other heat-based process steps.
Thermal control determines how far and how fast material changes occur, which directly affects junction formation, film quality, defect reduction, and device performance.
The following facts about the Alpha 8 S are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Alpha 8 S are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the Alpha 8 S are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Alpha 8 S are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Alpha 8 S is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Alpha 8 S are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Last updated Jul 30, 2026.