Tokyo Electron
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The Tokyo Electron Formula Vertical is a vertical diffusion furnace. The Tokyo Electron Formula Vertical is categorized as a thermal / diffusion tool. The Tokyo Electron Formula Vertical is configured for 300 mm (12 inch) wafers.[1]
Vertical diffusion furnaces are batch thermal processing tools used in semiconductor manufacturing. Vertical diffusion furnaces carry wafer lots in a quartz boat into a heated process tube for high-temperature treatment. Vertical furnace platforms are used where a process requires controlled thermal exposure together with defined ambient gases.
A vertical furnace operates by loading wafers in a vertical boat into a heated tube. A vertical furnace exposes the wafer batch to a controlled temperature profile and process atmosphere inside the tube. A vertical diffusion furnace can be arranged for deposition, oxidation, diffusion, or annealing chemistries depending on its installed process configuration.
Thermal and diffusion furnaces are used in front-end wafer fabrication for steps that modify films or dopant profiles through heat and gas-phase processing. Furnace steps commonly sit between cleaning, film patterning, etch, and metrology operations depending on the integration scheme. Vertical furnace processing is typically chosen for batch workflows that need uniform treatment across many wafers in one run.
Vertical diffusion furnaces are used for thermal oxidation, dielectric and conductive film deposition, dopant diffusion, and annealing. Vertical furnace process chambers can be configured for different precursor sets and thermal recipes to produce specific films or thermal transformations on wafers.
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| FORMULA VERTICAL FURNACE, ALD HIGH K(H TYPE) PROCESS | — | — | configured for ALD high-k (H type) process | fabsurplus.com[4] |
| FORMULA VERTICAL FURNACE, DCS SiN PROCESS | — | — | configured for DCS SiN (silicon nitride) process | fabsurplus.com[4] |
| FORMULA Vertical Furnace, DCS/NH3/HF/F2 | — | — | configured for DCS/NH3/HF/F2 chemistry | fabsurplus.com[3] |
| FORMULA VERTICAL FURNACE, TEOS/HF/F2 PROCESS | — | — | configured for TEOS/HF/F2 process | fabsurplus.com[4] |
| FORMULA VERTICAL FURNACE, DCS SiN(H TYPE) PROCESS | — | — | configured for DCS SiN (H type) process | fabsurplus.com[4] |
| FORMULA VERTICAL FURNACE, DCS SiN(M TYPE) PROCESS | — | — | configured for DCS SiN (M type) process | fabsurplus.com[4] |
| FORMULA VERTICAL FURNACE, H TYPE PROCESS | — | — | configured for H type process | fabsurplus.com[4] |
| FORMULA VERTICAL FURNACE, Teos(H TYPE) PROCESS | — | — | configured for Teos (H type) process | fabsurplus.com[4] |
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The following facts about the Formula Vertical are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Formula Vertical are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the Formula Vertical are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Formula Vertical are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Formula Vertical is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Formula Vertical are on record.
Answerable by: an OEM parts catalog or a service engineer
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Last updated Oct 16, 2026.
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