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Ion implanters introduce dopant species into semiconductor wafers by accelerating ions toward the wafer surface under controlled conditions. High current ion implanters are generally used where fabs need relatively high dose implants in production flows.
Ion implantation is generally a front-end wafer process used to form electrically active regions by placing dopant atoms into selected areas of the wafer. Ion implantation commonly occurs after patterning steps that define where dopants should enter and before later thermal and integration steps that activate dopants and continue device formation.
High current ion implanters are generally used for dopant introduction steps in semiconductor device fabrication. Ion implantation is commonly applied where process engineers need controlled placement of electrically active species for regions such as wells, source and drain structures, or contact-related implants.
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| GSD 200 E 2 | — | — | One source states 8 inch wafer size and lists software, CIM, process, handler, factory interface, and option details; another source states 6 inch wafer size. | Equipment inventory listing[1] |
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The following facts about the GSD 200 E 2 High Current are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the GSD 200 E 2 High Current are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the GSD 200 E 2 High Current are not on record.
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No publicly documented failure modes or field errata for the GSD 200 E 2 High Current are on record.
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The process node or technology generation of the GSD 200 E 2 High Current is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the GSD 200 E 2 High Current are on record.
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Last updated Oct 16, 2026.
Varian E 500 EHPI Ion Implant System is a 6-inch wafer ion implant system with a Windows 7 control computer and V15.10.12 software.
The Varian E 500 High Current Implanter is a high-current ion implanter for 6-inch wafers.
The Varian Viision 200 (also spelled VIISion 200) is a batch-process, high-current ion implanter for 200 mm wafers, introduced in 1996.
The Varian Viision 200 is an ion implanter for 8-inch wafers.