Axcelis
NV 8250
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
Power
208 VAC, 100 A, 50/60 Hz, 3 Phase[1]
Vacuum
TMP[1]
Gas delivery
AsH3 - SDS, PH3 - SDS, BF3 - SDS, Ar - HP[1]
What it is
The Axcelis NV 8250 is an ion implanter used for ion implantation in semiconductor manufacturing. The Axcelis NV 8250 processes 8 inch wafers. The Axcelis NV 8250 has an energy range of 0 to 250 keV. The Axcelis NV 8250 uses an ELS ion source and a single stage extraction range of 15 to 40 keV. The Axcelis NV 8250 includes programmable auto tilt from 0 to 75 degrees.[1][3]
How it works
The Axcelis NV 8250 uses parallel beam operation with hybrid scanning. The Axcelis NV 8250 includes a 90 degree radially indexed dipole magnet. The Axcelis NV 8250 has an energy filter system option. The Axcelis NV 8250 uses an electrostatic chuck and includes ESC angle correction. The Axcelis NV 8250 supports SECS II / GEM interface functions. The Axcelis NV 8250 uses a Sun Sparc Station V controller with application software version 4.3.2, auto start-up, and computer monitoring.[1][3]
The Axcelis NV 8250 uses a TMP source pump. The Axcelis NV 8250 uses 2 TMP beam pumps and a cryo beam pump. The Axcelis NV 8250 uses 2 cryo pumps at the end station. The Axcelis NV 8250 uses a CTI 8500 cryo compressor and a remote disk chiller. The Axcelis NV 8250 supports gas configurations including AsH3 with SDS, PH3 with SDS, BF3 with SDS, and Ar with HP.[1][3]
Where it fits in the process flow
General reference — not yet source-verifiedIon implantation sits in the device fabrication flow after masking has defined where dopants are meant to enter the wafer surface. Ion implantation is typically followed by thermal treatment that activates dopants and repairs implant damage.
Applications
General reference — not yet source-verifiedIon implantation is used to form doped regions in semiconductor devices. Ion implantation is used for wells, source and drain regions, threshold adjustment, and other controlled dopant placement steps in patterned wafers.
What do the numbers mean?
Power & electrical1
Vacuum & pumping7
- Pump / Cryogenics
- Source Pump: TMP; Beam Pump: TMP (2) and Cryo Pump (8" Torr, Non On-board); End Station Pump: 2 Cryo Pump (8" Torr, Non On-Board); Cryo Compressor: CTI 8500; Remote Disk Chiller[1]
Wafer handling4
- Cassette Interface
- Asyst Bolt-On SMIF (2), Cassette Stages (3), Automatic Flat/Notch Alignment, Programmable Flat Orient[1]
Gas & chemistry1
Control & software6
- Controller
- Sun Sparc Station V, Application SW Ver. 4.3.2, Auto Start-Up & Computer Monitoring[1]
Configuration & options19
- Backside[2]
What replaced it?
Alternatives
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
- Applied Materials E 500 EHPI Medium Current— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
- Applied Materials HEXP VIISta HE— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
- Applied Materials 9500 XR Ion— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
- Applied Materials VIISTA Trident XP Ion Implant— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Power Requirement208 VAC, 100 A, 50/60 Hz, 3 Phase[1]
- Pump / CryogenicsSource Pump: TMP; Beam Pump: TMP (2) and Cryo Pump (8" Torr, Non On-board); End Station Pump: 2 Cryo Pump (8" Torr, Non On-Board); Cryo Compressor: CTI 8500; Remote Disk Chiller[1]
- Gas ConfigurationAsH3 - SDS, PH3 - SDS, BF3 - SDS, Ar - HP[1]
- Source PumpTMP[1]
- Beam PumpTMP (2)[1]
- Beam PumpCryo Pump (8" Torr, Non On-board)[1]
- End Station Pump2 Cryo Pump (8" Torr, Non On-Board)[1]
- Cryo CompressorCTI 8500[1]
- Beam Pump Cryo Pump8" Torr, Non On-board[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
Not publicly documented
The following facts about the NV 8250 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NV 8250 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the NV 8250 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the NV 8250 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the NV 8250 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the NV 8250 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]inventory listing
- [3]NV 8250 — Axcelis | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
Last updated Oct 21, 2026.
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The Applied Materials 9500 XR Ion is an 8-inch high-current ion implanter that uses gases BF3, AS, and P, and was manufactured around 1996.
The Applied Materials HEXP VIISta HE is an ion implantation tool for 200mm wafers.
Applied Materials / Varian VIISTA Trident XP Ion Implant System is an ion implant system with a standard process type and an XP beamline.
The Applied Materials / Varian E 500 EHPI is a medium current implanter with a 6 inch wafer size.