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Nikon

i 12 D

LithographyWafer EquipmentNikon i 12 D family
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The Nikon i 12 D is a stepper. The Nikon i 12 D is a 150 mm version. The Nikon i 12 D is specified for 0.35 μm or less resolution.[1][2]

i 12 D — Inventory photo
Fig. 01i 12 DInventory photo[1]

Wafer size

Wafer Equipment

Performance

Focus Calibration Repeatability:[1]

Optics

Within 100 nm ((3σ) )[1]

What it is

The Nikon i 12 D is configured for wafers with a diameter of 150 mm. The system achieves a resolution of 0.35 μm or less.[1][2]

How it works

The system's integrated exposure stability is within ±1.0% at energies of 50 mJ/cm² or more, and within ±0.5% at 100 mJ/cm². Illumination uniformity across the exposure field is within ±1.0% based on five measurement points.[1][2]

Where it fits in the process flow

General reference — not yet source-verified

Steppers such as the i 12 D are used in the photolithography step of semiconductor manufacturing, where the circuit pattern is transferred from the reticle to the wafer.

Applications

The stepper is suitable for high-precision layers requiring overlay accuracy, as indicated by lens distortion within ±40 nm and focus repeatability within 100 nm (3σ).[1][2]

What do the numbers mean?

Wafer handling1

Wafer size
Wafer Equipment[3]
Accurate?

Gas & chemistry1

Resolution
0.35μm or less (High resolution, positive resist film of 1.0μm thickness )[1]
Accurate?

Optics & imaging19

Within 100 nm ((3σ) )[1]
Accurate?
Lens Distortion (Including Magnification Error):[1]
Accurate?
Within ± 40 nm 37 points / chip[1]
Accurate?
Magnification Control:[1]
Accurate?
Within ± 15 nm[1]
Accurate?
Maximum Exposure Area:[1]
Accurate?
Reticle Blind Setting Accuracy
+ 0.4 to + 0.8 mm (on reticle)[1]
Accurate?
Exposure Power:[1]
Accurate?
Integrated Exposure Stability (including integrated exposure matching):[1]
Accurate?
Resolution
0.35 μm or less[2]
Accurate?
Within 100 nm (3σ)[2]
Accurate?
Lens Distortion (Including Magnification Error): - Within ± 40 nm 37 points / chip[2]
Accurate?
Focus calibration repeatability
Within 100 nm (3σ), 20 measurements[1]
Accurate?
Lens distortion including magnification error
Within ±40 nm, 37 points/chip[1]
Accurate?
Magnification control
Within ±15 nm[1]
Accurate?
Maximum exposure area
Within 31.11 mm diameter; 22.0 mm x 22.0 mm to 17.96 mm x 25.2 mm (hor.) x (vert.)[1]
Accurate?
Exposure power
800 mW/cm2 or more[1]
Accurate?
Integrated exposure stability
Within ±1.0% (50 mJ/cm2 or more); within ±0.5% (at 100 mJ/cm2)[1]
Accurate?
Illumination uniformity
Within ±1.0%[1]
Accurate?

Performance1

Focus Calibration Repeatability:[1]
Accurate?

Configuration & options11

Version
150 mm[1]
Accurate?
20 measurements[1]
Accurate?
Measurement of Initial Heat
180 min[1]
Accurate?
Measurement of Initial Cool
240 min[1]
Accurate?
Within 31.11 mm dia.[1]
Accurate?
22.0 mm x 22.0 mm to 17.96 mm x 25.2 mm (hor.) X (vert.)[1]
Accurate?
800 mW / cm2 or more[1]
Accurate?
Measured after installed[1]
Accurate?
Within ± 1.0% (50 mJ / cm2 or more)[1]
Accurate?
Within 31.11 mm diameter[2]
Accurate?
Machine type
Stepper[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
Nikon i 12 D——One source describes a 150 mm version with 0.35 μm or less resolution; another source describes the same model with the same core specifications and a 2001 vintage note.Equipment inventory listing[2]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Resolution0.35μm or less (High resolution, positive resist film of 1.0μm thickness )[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

Why is alignment important in this class of machine?General reference — not yet source-verified

Each patterned layer must register correctly to features already present on the substrate. Alignment controls overlay between layers and helps ensure the intended device geometry is formed.

Does the lithography tool itself etch or deposit material?General reference — not yet source-verified

No. Machines of this class create the resist pattern. Separate tools then use that pattern to etch, implant, plate, or deposit material in the required areas.

What determines the quality of the printed pattern?General reference — not yet source-verified

Pattern quality depends on the interaction of resist processing, mask or reticle imaging, optical performance, focus, exposure control, alignment, and substrate condition.

Not publicly documented

The following facts about the i 12 D are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the i 12 D are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the i 12 D are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the i 12 D are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the i 12 D is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the i 12 D are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Inventory photo
  3. [3]dealer listingwotol.com
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Last updated Oct 15, 2026.

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