Trias Plasma Nitridation

The Tokyo Electron Trias is a plasma nitridation deposition system used in semiconductor manufacturing. The system supports 8-inch and 12-inch wafer sizes and is configured with a single chamber and a load port.^[1]

Plasma nitridation deposition systems generate a plasma to activate nitrogen-containing gases, producing reactive radicals that react with the wafer surface to form a thin nitride layer. The process parameters such as plasma power, gas flow, temperature, and pressure can be adjusted to control film composition and thickness.

The single-wafer processing architecture allows for uniform deposition across the wafer, while the plasma environment enables lower thermal budgets than conventional thermal nitridation. The tool typically includes a load port for automated wafer handling and a process chamber where the plasma is sustained.

The process can also be employed to create hardmasks, etch stop layers, or sidewall spacers. Upstream steps include wafer cleaning and pre-deposition treatments; downstream processing involves anneals or further thin-film depositions.

Primary applications of plasma nitridation include the formation of nitrided gate dielectrics in advanced logic and memory devices, where the nitrogen profile improves performance and reliability without excessive thermal exposure.

Additional uses include producing silicon nitride layers for hardmasks in photolithography, etch stop layers in interconnect structures, and barrier films in microelectromechanical systems (MEMS) and other semiconductor devices.