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Oxford Instruments

Plasmalab 80 Plus

Plasmalab 80 Plus — nano.upenn.edu
Fig. 01Plasmalab 80 Plusnano.upenn.edu[1]
  • Plate 01Plasmalab 80 Plus RIE

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  • Plate 02Oxford Instruments Plasmalab 80+ DPCVD semiconductor equipment

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  • Plate 03Oxford Plasmalab 80 Plus PECVD System (ID# 3908)

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  • Plate 04Oxford PlasmaLab 80+ Video Guide

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  • Plate 05Oxford PlasmaLab 80 Plus RIE PECVD Semiconductor equipment ~8 inch

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  • Plate 06Plasmalab 80 Plus RIE System

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  • Plate 07Oxford Plasmalab 80 Plus RIE / PE Etcher (ID# 3859)

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  • Plate 08Oxford Plasmalab 80 Plus RIE PE Etcher ID# 3859

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  • Plate 09Video 1 - Oxford Plasmalab 80 Plus RIE System (ID# 3559)

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  • Plate 10Oxford Plasmalab 80 Plus PECVD System (ID# 3864)

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  • Plate 11Video 1 - Oxford Plasmalab 80 Plus RIE System (ID# 3751)

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  • Plate 12Video 1 Oxford Plasmalab 80 Plus RIE System ID# 3751

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Wafer size

200mm

Power

600W[1]

Gas delivery

CF4, Ar, O2, SF6, CHF3[1]

What it is

The Oxford Instruments Plasmalab 80 Plus is a reactive ion etching system used for plasma-based etch processing. It is a compact, open-loading tool intended for research, prototyping, and low-volume production, and it can handle wafer pieces as well as wafers up to two hundred millimeters in diameter.[1][6]

How it works

General reference — not yet source-verified

Reactive ion etching uses a plasma to generate reactive species and directed ion bombardment, allowing material to be removed in a controlled way. An open-loading chamber lets wafers or pieces be placed in the process area without a fully enclosed automated cassette transfer sequence.

Where it fits in the process flow

General reference — not yet source-verified

In a nanofabrication flow, this type of system sits after pattern definition and before downstream cleaning, inspection, or device completion steps. It is used when patterned material must be etched with controlled shape and depth rather than simply deposited or cleaned.

Applications

The Plasmalab 80 Plus is used for reactive ion etching on materials processed with fluorine-based chemistries. The named process gases include CF4, Ar, O2, SF6, and CHF3.[1][6]

  • Reactive ion etching
  • Research and development
  • Small-scale production
  • Prototyping
  • Low-volume production

What do the numbers mean?

Power & electrical1

RF generator
600W[1]
Accurate?

Wafer handling1

Wafer capacity
up to 200mm wafers[1]
Accurate?

Gas & chemistry1

Process gases
CF4, Ar, O2, SF6, CHF3[1]
Accurate?

Configuration & options4

Tool ID
DE-04[1]
Accurate?
Type
Reactive Ion Etching (RIE)[1]
Accurate?
Design
compact open-loading tool[1]
Accurate?
Suitability
R&D or small-scale production[1]
Accurate?
Interested in this tool?
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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • RF generator600W[1]
  • Process gasesCF4, Ar, O2, SF6, CHF3[1]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Frequently asked questions

What substrate sizes can it handle?

It can process from small wafer pieces up to two hundred millimeter wafers.[1][6]

What type of loading does it use?

It uses convenient open loading.[1][6]

What kind of applications is it intended for?

It is intended for research, prototyping, and low-volume production.[1][6]

What power and process-control features are named?

A six hundred watt RF generator is named, along with optimized electrode cooling, excellent substrate temperature control, excellent etch control, and excellent rate determination.[1][6]

Not publicly documented

The following facts about the Plasmalab 80 Plus are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab 80 Plus are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Plasmalab 80 Plus are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Plasmalab 80 Plus are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Plasmalab 80 Plus are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Plasmalab 80 Plus is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (11)Every fact above is drawn from these public sources
  1. [1]nano.upenn.edunano.upenn.edunano.upenn.edu
  2. [2]Inventory photo
  3. [3]Inventory photo
  4. [4]Inventory photo
  5. [5]Inventory photo
  6. [6]Oxford Plasmalab 80 Plus | UCLA Nanolabnanolab.ucla.edunanolab.ucla.edu
  7. [7]PlasmaLab M80 Plus – Chlorine - Core Research Facilitiescores.research.asu.educores.research.asu.edu
  8. [8]Oxford Plasmalab80Plus (PECVD) - AggieFab Nanofabrication Facilityaggiefab.tamu.eduaggiefab.tamu.edu
  9. [9]Physical Vapor Depositionnanolab.berkeley.edunanolab.berkeley.edu
  10. [10]University-of-Utah-94-721002-System-Manualnanofab.utah.edunanofab.utah.edu
  11. [11]PECVD System Manual - Maryland University 94-219896 .pdfnanocenter.umd.edunanocenter.umd.edu
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Last updated Jul 29, 2026.

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