Oxford Instruments

PlasmaPro80

Etch 200mm Oxford Instruments PlasmaPro80 family

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Oxford InstrumentsPlasmaPro80

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Plate 01Oxford Instruments - PlasmaPro 80 Training
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Wafer size

200mm

Power

300 W @ 13.56 MHz^[1]

Gas delivery

fluorine chemistry^[1]

What is it?

The Oxford Instruments PlasmaPro80 is listed as an RIE dry etcher in two configurations. One is designated RIE 1 for hBN, SiGe, graphite, and graphene soft etching with an open-load system and up to 200 mm chips-to-wafer handling; the other is designated RIE 2 for Nb, Ta, and superconducting nitride thin-film etching on 100 mm wafers with laser reflectometry/interferometry end-point detection.

What can it run?

Process applications and technology nodes documented for this tool.

hBN, SiGe, graphite and graphene soft etching
Nb, Ta and superconducting nitride thin-films etching

What do the numbers mean?

Power & electrical1

Maximum power: 300 W @ 13.56 MHz^[1]

Wafer handling3

Load system: Open-load system (no load lock)^[1]
Wafer handling: chips to wafer up to 200mm^[1]
Wafer size: 100mm wafers^[1]

Gas & chemistry3

Chemistry: fluorine chemistry^[1]
Process gases: CHF3, SF6, O2, Ar^[1]
Process gases: CF4, CHF3, SF6, O2, Ar^[1]

Optics & imaging1

Endpoint detection: Laser reflectometry/interferometry end-point-detection^[1]

Configuration & options5

OEM: Oxford Instruments^[1]
Model: PlasmaPro80^[1]
Tool type: RIE dry etcher^[1]
Applications: hBN, SiGe, graphite and graphene soft etching^[1]
Applications: Nb, Ta and superconducting nitride thin-films etching^[1]

Vintage & configurations

Documented models & variants

Designation	Generation	Vintage	Changes	Source
Oxford PlasmaPro80, RIE dry etcher, fluorine chemistry (RIE 1)	—	—	ONLY hBN, SiGe, Graphite and Graphene etching; RIE plasma etcher; CHF3, SF6, O2, Ar; max 300W @ 13.56MHz; open-load system (no load lock); chips to wafer up to 200mm; hBN, SiGe, Graphite and Graphene soft etching.	epfl.ch^[1]
Oxford PlasmaPro80, RIE dry etcher, fluorine chemistry (RIE 2)	—	—	ONLY Nb/Ti/Ta based samples; RIE plasma etcher; 100mm wafers; CF4, CHF3, SF6, O2, Ar; max 300W @ 13.56MHz; open-load system (no load lock); Nb, Ta and superconducting nitride thin-films etching; laser reflectometry/interferometry end-point-detection.	epfl.ch^[1]

Interested in this tool?

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Chemistryfluorine chemistry^[1]
Process gasesCHF3, SF6, O2, Ar^[1]
Process gasesCF4, CHF3, SF6, O2, Ar^[1]
Maximum power300 W @ 13.56 MHz^[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the PlasmaPro80 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the PlasmaPro80 are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the PlasmaPro80 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the PlasmaPro80 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the PlasmaPro80 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the PlasmaPro80 are on record.
Answerable by: an OEM parts catalog or a service engineer