Waferpedia

Oxford Instruments

Plasmalab 80 Plus RIE

Etch8"Oxford Instruments Plasmalab 80 family
Research Quality: 70% complete
Plasmalab 80 Plus RIE — Inventory photo
Fig. 01Plasmalab 80 Plus RIEInventory photo[1]

Wafer size

8"

Power

50/60 Hz[1]

Vacuum

30 - 100 Mtorr[1]

Performance

5 - 10 % range[3]

Gas delivery

100 sccm[1]

What it is

General reference — not yet source-verified

The Oxford Instruments Plasmalab 80 Plus RIE is an etch tool in the reactive ion etch class. Such systems are used for controlled dry removal of films and patterned layers from a substrate surface.

Machines of this class combine plasma generation with directional ion bombardment to support pattern transfer in semiconductor and microfabrication workflows. They are used where etch shape, selectivity, and repeatability matter more than simple bulk material removal.

How it works

General reference — not yet source-verified

A reactive ion etch system creates a low-pressure plasma from process gases inside a chamber. The plasma produces chemically active species that react with exposed material while electric fields accelerate ions toward the surface to make the etch more directional.

The balance between chemical reaction and physical ion assistance allows the machine class to etch selected materials, open patterned features, and control sidewall profile. Process conditions are adjusted to match the material being removed and the pattern transfer goal.

Where it fits in the process flow

General reference — not yet source-verified

This class of machine is used after patterning steps such as lithography and resist development, when the exposed material must be removed from selected regions. It is typically part of the front-end or microfabrication sequence where features are defined into films or device layers.

Applications

General reference — not yet source-verified

Reactive ion etch systems are generally used for semiconductor fabrication, MEMS work, thin-film patterning, and other precision microfabrication tasks. They are also used for material research and process development where controlled dry etching is required.

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • Missing one 15 V power supply (needed to work)

What do the numbers mean?

Power & electrical7

50/60 Hz[1]
Accurate?
Voltage
415 VAC, 3 Phase[1]
Accurate?
Full Load Amps
25.6 A[1]
Accurate?
RF Generator
300 Watt 13.56 MHZ[1]
Accurate?
Phase
3 Phase[2]
Accurate?
RF generator
300 Watt 13.56MHz[2]
Accurate?
Missing one 15 V Power Supply (needed to work)[4]
Accurate?

Vacuum & pumping5

Typical Process Pressure
30 - 100 Mtorr[1]
Accurate?
Pumping System
Corrosion Resistant Turbo Molecular Pump with Rotary Pump[1]
Accurate?
Typical process pressure
30 – 100 mtorr[2]
Accurate?
Pumping system
Corrosion-resistant turbo-molecular pump with rotary pump[2]
Accurate?
Pumps Down[4]
Accurate?

Wafer handling2

Wafer size
Small piece of wafer until max full 8 inches wafer[2]
Accurate?
PECVD Tested for 2" - 4" wafers[3]
Accurate?

Gas & chemistry3

Max Flow Rate Per Gas
100 sccm[1]
Accurate?
Available Gases in Chamber
Ar, CF4, O2, CHF3, SF6, & He[1]
Accurate?
Available gas in the chamber
Ar, CF4, O2, CHF3, SF6 & He.[2]
Accurate?

Performance1

Uniformity
5 - 10 % range[3]
Accurate?

Control & software1

HDD & Software Included[1]
Accurate?

Configuration & options4

Table
Cool Down Only (No Heating)[1]
Accurate?
Table
Only cooled down, no heating.[2]
Accurate?
Dual Chamber[3]
Accurate?
With 9" plate[3]
Accurate?
Interested in this tool?
Embed spec card

What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Configuration50/60 Hz[1]
  • Voltage415 VAC, 3 Phase[1]
  • Full Load Amps25.6 A[1]
  • Max Flow Rate Per Gas100 sccm[1]
  • RF Generator300 Watt 13.56 MHZ[1]
  • Typical Process Pressure30 - 100 Mtorr[1]
  • Pumping SystemCorrosion Resistant Turbo Molecular Pump with Rotary Pump[1]
  • Available Gases in ChamberAr, CF4, O2, CHF3, SF6, & He[1]
  • Phase3 Phase[2]
  • Available gas in the chamberAr, CF4, O2, CHF3, SF6 & He.[2]
  • RF generator300 Watt 13.56MHz[2]
  • Typical process pressure30 – 100 mtorr[2]
  • Pumping systemCorrosion-resistant turbo-molecular pump with rotary pump[2]
  • ConfigurationPumps Down[4]
  • ConfigurationMissing one 15 V Power Supply (needed to work)[4]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Frequently asked questions

What table or chuck condition is specified?

One configuration specifies a cooled table with no heating.[1][2]

Not publicly documented

The following facts about the Plasmalab 80 Plus RIE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab 80 Plus RIE are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Plasmalab 80 Plus RIE are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Plasmalab 80 Plus RIE are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the Plasmalab 80 Plus RIE is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the Plasmalab 80 Plus RIE are on record.

    Answerable by: an OEM parts catalog or a service engineer

Sources & citations

Sources (8)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Inventory photo
  3. [3]inventory listing
  4. [4]inventory listing
  5. [5]allwin21.comallwin21.com
  6. [6]University-of-Utah-94-721002-System-Manualnanofab.utah.edunanofab.utah.edu
  7. [7]Oxford Plasmalab 80 Plus | UCLA Nanolabnanolab.ucla.edunanolab.ucla.edu
  8. [8]PECVD System Manual - Maryland University 94-219896 .pdfnanocenter.umd.edunanocenter.umd.edu
Was this page accurate?

Last updated Jul 29, 2026.

Compare with similar tools

View all →