Centura 5200 EPI Reactor

The Applied Materials Centura 5200 EPI Reactor is a deposition tool. The Applied Materials Centura 5200 EPI Reactor is an epitaxial reactor. The Applied Materials Centura 5200 EPI Reactor is configured with 3 atmospheric epi chambers and 1 cool-down chamber. The Applied Materials Centura 5200 EPI Reactor supports a universal loadlock platform for 200mm or 150mm wafers.^[1][2]

An epitaxial reactor moves wafers through loadlock and transfer hardware into process chambers where heated wafer surfaces are exposed to reactive gases. Epitaxial deposition in this equipment class relies on controlled gas flow, temperature, and chemistry so the deposited layer grows with the substrate crystal orientation. A cool-down chamber in this class of system is used to reduce wafer temperature after deposition before the wafer returns to handling modules.

Epitaxial reactors are used in wafer fabrication when an engineered crystalline layer must be added before later patterning and integration steps. Epitaxial deposition commonly sits upstream of lithography, etch, implant, and metallization steps that build devices into the prepared surface stack.

Epitaxial reactors are used to form single-crystal semiconductor layers for device structures that depend on controlled thickness, composition, resistivity, or dopant profile. Epitaxial deposition supports applications such as substrate engineering, device layer formation, and growth of films that must preserve crystal continuity with the wafer.